Semiconductor memory device

ABSTRACT

A semiconductor memory device includes word lines, drain lines, source lines, a memory array including plural memory cells formed from a field effect transistor, a data write circuit, a write control circuit, and a word line drive circuit, wherein the write control circuit outputs the drain drive voltage of H-level to the selected memory cell when a data write operation is commanded, and outputs the drain drive voltage of L-level when a data write operation is not commanded, and the data write circuit generates a write voltage corresponding to a logical value of data to be written into the selected memory cell based on the drain drive voltage outputted from the write control circuit, and supplies the write voltage as the source drive voltage via the source line to the selected memory cell when a data write operation is commanded by the first control signal.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor memory device such as a non-volatile memory (e.g., an EPROM) which allows electrical write.

2. Description of the Related Art

FIG. 16 is a diagram schematically showing the construction of a conventional EPROM. See Japanese Patent Kokai (Laid-Open) Publication No. 2000-331486, for example. Further, FIG. 17 is a diagram schematically showing the construction of four memory cells in the EPROM of FIG. 16. Furthermore, FIGS. 18 and 19 are diagrams for describing the problems in the EPROM of FIG. 16.

The EPROM shown in FIG. 16 has memory arrays 10 ₀, . . . , 10 _(n) provided with plural memory cells 11 (in distinguishing and describing each, the symbols 11 a, 11 b, 11 c and 11 d are also used) formed in a semiconductor substrate. In the semiconductor substrate in which the memory arrays 10 ₀, . . . , 10 _(n) on are formed, plural word lines WL₀, . . . , WL_(n) are arranged mutually in parallel, plural drain lines DL₀, . . . , DL_(y), DL_(z) are arranged intersecting perpendicularly with the word lines WL₀, . . . , WL_(n), and plural source lines SL₀, . . . , SL_(y), SL_(z) are arranged intersecting perpendicularly with the word lines WL₀, . . . , WL_(n). As shown in FIG. 17, the memory cell 11 (11 a, 11 b, 11 c and 11 d) includes, for example, field effect transistors which have gates GA, drains DR_(a), DR_(bc) and DR_(d), sources SOU_(ab) and SOU_(cd), and floating gates FG_(a), FG_(b), FG_(c) and FG_(d). The gates of the plural memory cells 11 are connected to one of the plural word lines WL₀, . . . , WL_(n). Each drain of the plural memory cells 11 is connected to one of the plural drain lines DL₀, . . . , DL_(z), and each source of the plural memory cells 11 is connected to one of the plural source lines SL₀, . . . , SL_(z). In addition, the actual EPROM has circuits such as an address decoder for generating decoded signals DEC₀, . . . , DEC_(n), and a sense amplifier to read the data stored in the memory cell, these not being shown in the figures.

In each of the memory arrays 10 ₀, . . . , 10 _(n), the drain lines DL₀, . . . , DL_(y), DL_(z) are respectively connected via NMOS transistors 12 ₀, . . . , 12 _(y1) (or 12 _(y2)), 12 _(z1) (or 12 _(z2)) to a write control line 13, to which a drain drive voltage (write control signal) MCD is supplied. In each of the memory arrays 10 ₀, . . . , 10 _(n), ON/OFF control of the even-numbered NMOS transistors 12 ₀, 12 ₂, . . . , 12 _(y1), 12 _(z1) is performed by even number selection signals SE₀, . . . , SE_(n), respectively, and ON/OFF control of the odd-numbered NMOS transistors 12 ₁, 12 ₃, . . . , 12 _(y2), 12 _(z2) is performed by odd number selection signals SO₀, . . . , SO_(n), respectively. Moreover, in each of the memory arrays 10 ₀, . . . , 10 _(n), the source lines SL₀, . . . , SL_(y), SL_(z) are connected to the bit lines BL₀, . . . , BL_(y), BL_(z) via the NMOS transistors 14 ₀, . . . , 14 _(y), 14 _(z) which are ON/OFF controlled by memory array selection signals SS₀, . . . , SS_(n).

The EPROM shown in FIG. 16 includes word line drive circuits 20 ₀, . . . , 20 _(n) which supply drive signals to each of the word lines WL₀, . . . , WL_(n), a write control circuit 30 which supplies the drain drive voltage MCD to the write control line 13, data write circuits 40 ₁ and 40 ₂ which supply data BLA₁ and BLA₂ (data supplied to the bit lines BL_(y) and BL_(z) are represented as BLA₃ and BLA₄, respectively) to the bit lines BL₀, . . . , BL_(y), BL_(z) (the data write circuits 40 ₃ and 40 ₄ supply data BLA₃ and BLA₄ to the bit lines BL_(y) and BL_(z), respectively), and a delay circuit 50 which delays a reset signal RST and outputs the delayed reset signal as a reset signal RST₁. The input of the data write circuits 40 ₃ and 40 ₄ is a power supply voltage VCC which is at high level (H-level).

The word line drive circuits 20 ₀, . . . , 20 _(n) have mutually identical constructions. The word line drive circuits 20 ₀, . . . , 20 _(n) respectively generate and output word line selection signals (word line drive voltages) to be supplied to the word lines WL₀, . . . , WL_(n) in accordance with the decoded signals DEC₀, . . . , DEC_(n) supplied from the address decoder. When the decoded signals DEC₀, . . . , DEC_(n) are at low level (L-level) which represents “non-selection”, the word line drive circuits 20 ₀, . . . , 20 _(n) output a ground voltage GND to the word lines WL₀, . . . , WL_(n) as a word line selection signal. When the decoded signals DEC₀, . . . , DEC_(n) are at H-level which represents “selection”, the word line drive circuits 20 ₀, . . . , 20 _(n) function according to a program mode signal “^(˜)PGM” (in this specification, “^(˜)PGM” means “PGM” with an upper line (i.e., overline), and represents the inverse signal of the signal PGM. In the figures, “^(˜)PGM” is represented as “PGM” with an upper line. During data write, the word line drive circuits 20 ₀, . . . , 20 _(n) output a program voltage VPP (e.g., 10 V) to the word lines WL₀, . . . , WL_(n) as a word line selection signal, and during data read, output the power supply voltage VCC to the word lines WL₀, . . . , WL_(n) as a word line selection signal.

During data write, the reset signal RST inputted to the write control circuit 30 is at L-level, the drain drive voltage MCD outputted from the write control circuit 30 is determined by the program voltage VPP and the control voltage VR, and is a voltage VCC+2Vtn (where Vtn is a threshold voltage of the NMOS transistor, and is approximately 1 V). The reset signal RST is at H-level during data read. At this time, the drain drive voltage MCD outputted from the write control circuit 30 is the ground voltage GND.

The data write circuits 40 ₁, 40 ₂, 40 ₃ and 40 ₄ have mutually identical constructions. When the program mode signal ^(˜)PGM is caused to be L-level to perform a data write operation, the data write circuits 40 ₁ and 40 ₂ output the ground voltage GND or the write signals BLA₁ and BLA₂ of the power supply voltage VCC from a node N40 according to the L-level or H-level of input data D₁ and D₂. The data write circuits 40 ₁, 40 ₂, 40 ₃ and 40 ₄ are configured in such a way that when a data read operation is performed by the program mode signal ^(˜)PGM, the node N40 of the data write circuits 40 ₁ and 40 ₂ is in a high impedance state.

For example, the data write circuit 40 ₁ includes an inverter 41 to which the input data D₁ is supplied, a NOR gate 42 which outputs the negative logical sum of the output signal of the inverter 41 and the program mode signal ^(˜)PGM, and a NOR gate 43 which outputs the negative logical sum of the output signal of the NOR gate 42 and the program mode signal ^(˜)PGM. The data write circuit 40 ₁ also includes an NMOS transistor 44 which is connected between the node N40 and the ground voltage GND, and is controlled by the output signal of the NOR gate 43, an NMOS transistor 45 which is connected between the power supply voltage VCC and the node N40, and is controlled by the output signal of the NOR gate 42, and an NMOS transistor 46 which is connected between the node N40 and the ground voltage GND, and is controlled by the reset signal RST₁ outputted from the delay circuit 50.

The write signals BLA₁ and BLA₂ outputted from the data write circuit 40 ₁ and 40 ₂ are respectively supplied, for example, to the adjacent bit lines BL₀ and BL₁ via the transistors 60 a and 60 b selected by column selection signals Y₀ and Y₁.

When a logical value low (represented by ‘L’) is written as data into the memory cell 11 selected by the word line WL_(i) (a subscript “i” is an integer from 0 to n) even number selection signal SE_(j) or the odd number selection signal SO_(j) (a subscript “j” is an integer from 0 to n), memory array selection signal SS_(j), and column selection signal Y_(k) (a subscript “k” is an integer greater than 0), the data D₁ inputted to the data write circuit 40, is at L-level. At this time, the gate voltage Vg of the memory cell 11 is 10 V, the drain voltage Vd is VCC+2Vtn (=6 V), and the source voltage Vs is 0 V. Therefore, in the memory cell 11, a large current I_(a1) flows from the drain to the source (e.g., in FIG. 17, from the drain DR_(a) to the source SOU_(ab)), and due to the avalanche hot carrier generated by this current, electrons are injected into the floating gate (e.g., in FIG. 17, the floating gate FG_(a)).

On the other hand, when a high logical value (represented by ‘H’) is written as data into the memory cell 11 selected by the word line WL_(j), even number selection signal SE_(j) or odd number selection signal SO_(j), memory array selection signal SS_(j) and column selection signal Y_(k), the input data D₂ is at H-level. At this time, the gate voltage Vg of the memory cell 11 is 10 V and the drain voltage Vd is VCC−2Vtn (=3 V). Therefore, in the memory cell 11, only a relatively small current I_(d1) flows from the drain to the source (e.g., in FIG. 17, from the drain DR_(d) to the source SOU_(cd)), and electrons are not injected into the floating gate (e.g., in FIG. 17, the floating gate FG_(d)) because no avalanche hot carriers are generated.

In the aforesaid conventional EPROM, two adjacent bit lines BL_(k) and BL_(k+1) are selected simultaneously by the column selection signal Y_(k). The data (e.g., data BLA₁ and BLA₂) outputted from the data write circuits (e.g., data write circuits 40 ₁ and 40 ₂) are written respectively into two memory cells 11 connected to the selected bit lines BL_(k) and BL_(k+1). In FIG. 16, the data BLA₁ and BLA₂ are written simultaneously into the memory cells 11 a and 11 d selected by the word line WL₀, even number selection signal SE₀, memory array selection signal SS₀, and the column selection signal Y₀, respectively. For example, if the memory cell 10 ₀ is selected by the memory array selection signal SS₀, the word line WL₀ is selected by the word line drive circuit 20 _(n), the bit lines BL₀ and BL₁ are selected by the column selection signal Y₀, and the drain lines DL₀ and DL₂ are selected by the even number selection signal SE₀, current flows from the drain line DL₀ via the memory cell 11 a, source line SL₀, NMOS transistor 14 ₀, and bit line BL₀. As a result, a charge accumulates in the floating gate of the memory cell 11 a (when it has the logical value ‘L’), or does not accumulate in it (when it has the logical value ‘H’). Also, current flows from the drain line DL₂ via the memory cell 11 d, source line SL₁, NMOS transistor 141, and bit line BL₁. As a result, a charge accumulates in the floating gate of the memory cell 11 d (when it has the logical value ‘L’), or does not accumulate in it (when it has the logical value ‘H’).

In the above-mentioned conventional EPROM, the program mode signal ^(˜)PGM inputted to the data write circuits 40 ₁ and 40 ₂ is at H-level, the outputs of the NOR gates 42 and 43 are at L-level, and then the NMOS transistors 44 and 45 are both OFF. As a result, the output (namely, the node N40) of the data write circuits 40 ₁ and 40 ₂ is in a high impedance state. At this time, a current path from the memory cells 11 a, 11 b, 11 c and 11 d to the ground voltage GND does not exist, so if the memory cells 11 a, 11 b, 11 c and 11 d are in the logical value ‘H’ state, as shown in FIG. 18, the drain lines DL₀, DL₁ and DL₂, the source lines SL₀ and SL₁, and the bit lines BL₀ and BL₁ go up to the drain drive voltage MCD, i.e., VCC+2Vtn, (=6 V) via the memory cells 11 a, 11 b, 11 c and 11 d, respectively.

Here, if the logical value ‘L’ is written into the memory cell 11 a and the logical value ‘H’ is written into the memory cell 11 d, the program mode signal ^(˜)PGM inputted to the data write circuits 40 ₁ and 40 ₂ is at L-level, the write signal BLA₁ outputted from the data write circuit 40, is at L-level, and the write signal BLA₂ outputted from the data write circuit 40 ₂ is at H-level. Then, as shown in FIG. 19, the bit line BL₀ and source SOU_(ab) are at ground voltage GND (=0 V), and the bit line BL₁ and source SOU_(cd) are at a voltage VCC−Vtn (=3 V). At this time, as shown by the arrow I_(a2), current flows from the drain DR_(a) to the source SOU_(ab) at GND voltage, electrons are injected into the floating gate FG_(a) by an avalanche hot carrier, and the logical value ‘L’ is written into the memory cell 11 a. Also, only a small current I_(d2) flows from the drain DR_(d) to the source SOU_(cd) at the voltage VCC−Vtn, so electrons are not injected into the floating gate FG_(d) by an avalanche hot carrier, and the logical value ‘H’ is written into the memory cell 11 d.

However, before data write to the memory cells 11 a and 11 d shown in FIG. 19 (at a time shown in FIG. 18), when data write occurs, the charge (voltage VCC+2Vtn) stored in the bit line BL₁ and drain line DL₁ is discharged through the source line SL₀ and bit line BL₀ at GND level, e.g., via the memory cell 11 b. Due to this discharge current (e.g., current I_(b) in FIG. 19), electrons may be injected into the floating gate FG_(b) of the memory cell 11 b, and incorrect write of data to the memory cell 11 b which is not selected, may arise. Moreover, if the threshold voltage Vt of the memory cell increases due to injection of electrons into the floating gate, an access delay may occur and the operating power supply voltage may change.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a semiconductor memory device which does not cause incorrect data write or an access delay.

According to the present invention, a semiconductor memory device includes plural word lines; plural drain lines; plural source lines; a memory array including plural memory cells formed from a field effect transistor having a gate, a drain, a source and a floating gate, the gate of each of the plural memory cells being connected to any of the plural word lines, the drain of each of the plural memory cells being connected to any of the plural drain lines, the source of each of the plural memory cells being connected to any of the plural source lines; a data write circuit which receives a first control signal and write data and supplies a source drive voltage to the source line when data is written into the memory cell; a write control circuit which receives a second control signal supplied later than the first control signal and supplies a drain drive voltage based on the second control signal to the drain line when data is written into the memory cell; and a word line drive circuit which receives an address signal and the second control signal, and supplies a word line drive voltage based on the second control signal to the word line selected according to the address signal. The write control circuit outputs the drain drive voltage at a high level for data write via the drain line to the memory cell selected by the word line drive circuit when a data write operation is commanded by the second control signal, and outputs the drain drive voltage at a low level when a data write operation is not commanded by the control signal, and the data write circuit generates a write voltage corresponding to a logical value of data to be written into the selected memory cell based on the drain drive voltage outputted from the write control circuit, and supplies the write voltage as the source drive voltage via the source line to the selected memory cell when a data write operation is commanded by the first control signal.

According to the present invention, a second control signal which has a delayed timing with respect to a first control signal (program mode signal) which commands a data write operation, is supplied to a word line drive circuit and a control circuit, and a high level control voltage for data write generated by the write control circuit is supplied to a data write circuit. Hence, when the data to be written is supplied to the data write circuit, in a selected memory cell and another memory cell which is not selected, the voltage of the drain and source is essentially ground voltage. Subsequently, a high level selection signal for data write is outputted from the word line drive circuit by a second control signal, and a high level control voltage for data write is generated by the write control circuit, and supplied to the data write circuit. Therefore, a high voltage is no longer applied between the drain and source of memory cells into which data are not written, and the cause of incorrect writes and fluctuation in the threshold voltage of the memory cells is eliminated.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention, and wherein:

FIG. 1 is a diagram schematically showing the construction of an EPROM according to a first embodiment of the present invention;

FIG. 2 is a signal waveform diagram for describing a data write operation of the EPROM according to the first embodiment;

FIG. 3 is a diagram (No. 1) for describing a data write operation of the EPROM according to the first embodiment;

FIG. 4 is a diagram (No. 2) for describing a data write operation of the EPROM according to the first embodiment;

FIG. 5 is a diagram (No. 3) for describing a data write operation of the EPROM according to the first embodiment;

FIG. 6 is a diagram schematically showing the construction of the EPROM according to a second embodiment of the present invention;

FIG. 7 is a signal waveform diagram for describing a data write operation of the EPROM according to the second embodiment;

FIG. 8 is a diagram schematically showing the construction of an EPROM according to a third embodiment of the present invention;

FIG. 9 is a circuit diagram showing the construction of a control signal generation circuit of the EPROM according to the third embodiment;

FIG. 10 is a diagram schematically showing the construction of an EPROM according to a fourth embodiment of the present invention;

FIG. 11 is a circuit diagram showing the construction of the data write circuit of the EPROM according to the fourth embodiment;

FIG. 12 is a signal waveform diagram for describing a data write operation of the EPROM according to the fourth embodiment;

FIG. 13 is a diagram (No. 1) for describing a data write operation of the EPROM according to the fourth embodiment;

FIG. 14 is a diagram (No. 2) for describing a data write operation of the EPROM according to the fourth embodiment;

FIG. 15 is a diagram (No. 3) for describing a data write operation of the EPROM according to the fourth embodiment;

FIG. 16 is a diagram schematically showing the construction of a prior art EPROM;

FIG. 17 is a diagram schematically showing the construction of memory cells of a conventional EPROM;

FIG. 18 is a diagram (No. 1) for describing a problem of the conventional EPROM; and

FIG. 19 is a diagram (No. 2) for describing a problem of the conventional EPROM.

DETAILED DESCRIPTION OF THE INVENTION

Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications will become apparent to those skilled in the art from the detailed description.

First Embodiment

FIG. 1 is a diagram schematically showing the construction of an EPROM which is a semiconductor memory device according to the first embodiment of the present invention. Those structures in FIG. 1 that are identical to or correspond to structures in FIG. 16 are assigned identical symbols. Further, FIG. 2 is a signal waveform diagram for describing a data write operation of the EPROM according to the first embodiment. Furthermore, FIGS. 3 to 5 are diagrams (Nos. 1–3) for describing a data write operation of the EPROM according to the first embodiment.

The EPROM according to the first embodiment includes memory arrays 10 ₀, . . . , 10 _(n) provided with plural memory cells 11 (in distinguishing and describing each, the symbols 11 a, 11 b, 11 c and 11 d will also be used) formed in a semiconductor substrate. The region on the semiconductor substrate in which the memory arrays 10 ₀, . . . , 10 _(n) are formed is provided with plural word lines WL₀, . . . , WL_(n), plural drain lines DL₀, . . . , DL_(y), DL_(z), and plural source lines SL₀, . . . , SL_(y), SL_(z).

The memory cells 11 (11 a, 11 b, 11 c and 11 d) are field effect transistors which have gates (e.g., gates GA in FIG. 3), drains (e.g., drains DR_(a), DR_(bc) and DR_(d) in FIG. 3), sources (e.g., sources SOU_(ab) and SOU_(cd) in FIG. 3), and floating gates (e.g., FG_(a), FG_(b), FG_(c) and FG_(d) in FIG. 3).

The gates of the plural memory cells 11 are connected to one of the plural word lines WL₀, . . . , WL_(n). Each drain of the plural memory cells 11 is connected to one of the plural drain lines DL₀, . . . , DL_(y), DL_(z), and each source of the plural memory cells 11 is connected to one of the plural source lines SL₀, . . . , SL_(z). The EPROM also includes circuits such as an address decoder for generating the decoded signals DEC₀, . . . , DEC_(n), and a sense amplifier to read the data stored in the memory cells 11, these not being shown in the figures.

In each of the memory arrays 10 ₀, . . . , 10 _(n), the drain lines DL₀, . . . , DL_(y), DL_(z) are respectively connected via the NMOS transistors 12 ₀, . . . , 12 _(y1) (or 12 _(y2)), 12 _(z1) (or 12 _(z2)) to the write control line 13, to which a drain drive voltage MCD is supplied. In each of the memory arrays 10 ₀, . . . , 10 _(n), ON/OFF control of the even-numbered NMOS transistors 12 ₀, 12 ₂, . . . , 12 _(y1), 12 _(z1) is performed by the even number selection signals SE₀, . . . , SE_(n), respectively, and ON/OFF control of the odd-numbered NMOS transistors 12 ₁, 12 ₃, . . . , 12 _(y2), 12 _(z2) is performed by the odd number selection signals SO₀, . . . , SO_(n), respectively. Moreover, in each of the memory arrays 10 ₀, . . . , 10 _(n), the source lines SL₀, . . . , SL_(y), SL_(z) are respectively connected to the bit lines BL₀, . . . , BL_(y), BL_(z) via the NMOS transistors 14 ₀, . . . , 14 _(y), 14 _(z) which are ON/OFF controlled by the memory array selection signals SS₀, . . . , SS_(n).

The EPROM according to the first embodiment also includes the word line drive circuits 20 ₀, . . . , 20 _(n) which supply drive signals to each of the word lines WL₀, . . . , WL_(n), a write control circuit 30A which supplies the drain drive voltage MCD to the write control line 13, and data write circuits 40A₁ and 40A₂ which supply data BLA₁ and BLA₂ (data supplied to the bit lines BL_(y) and BL_(z) are represented as BLA₃ and BLA₄, respectively) to the bit lines BL₀, . . . , BL_(y), BL_(z) (the data write circuits 40 ₃ and 40 ₄ supply data BLA₃ and BLA₄ to the bit lines BL_(y) and BL_(z), respectively).

The word line drive circuits 20 ₀, . . . , 20 _(n) have mutually identical constructions. The word line drive circuits 20 ₀, . . . , 20 _(n) respectively generate and output word line selection signals to the word lines WL₀, . . . , WL_(n) according to the decoded signals DEC₀, . . . , DEC_(n) supplied from the address decoder. When the decoded signals DEC₀, . . . , DEC_(n) are at L-level indicating “non-selection”, the word line drive circuits 20 ₀, . . . , 20 _(n) output the ground voltage GND to the word lines WL₀, . . . , WL_(n). When the decoded signals DEC₀, . . . , DEC_(n) are at H-level indicating “selection”, the word line drive circuits 20 ₀, . . . , 20 _(n) operate according to the program mode signal ^(˜)PGM. During data write, the word line drive circuits 20 ₀, . . . , 20 _(n) output a program voltage VPP (e.g., 10 V) to the word lines WL₀, . . . , WL_(n), and during data read, output the power supply voltage VCC (e.g., 4 V) to the word lines WL₀, . . . , WL_(n), respectively.

The write control circuit 30A includes a reference voltage generating part 31, and is controlled by an identical control signal CON to the control signal inputted to the word line drive circuits 20 ₀, . . . , 20 _(n). During data write, the control signal CON inputted to the write control circuit 30A is at L-level. When the control signal CON is at L-level, the write control circuit 30A outputs the drain drive voltage MCD (e.g., 6 V) of the voltage VCC+2Vtn (where Vtn is a threshold voltage of the NMOS transistor and is approximately 1 V), and when the control signal CON is at H-level, it outputs a drain drive voltage MCD of, for example, 0.8 V.

The data write circuits 40A₁, 40A₂, 40A₃ and 40A₄ have mutually identical constructions. When a data write operation is performed by setting the program mode signal ^(˜)PGM to L-level, the data write circuits 40A₁, 40A₂, 40A₃ and 40A₄ output the ground voltage GND or the write signals BLA₁ and BLA₂ (or BLA₃ and BLA₄) of the power supply voltage VCC from the node N40 depending on whether the input data D₁ and D₂ are L-level or H-level (the input data of the data write circuits 40A₃ and 40A₄ is VCC). The data write circuits 40 ₁, 40 ₂, 40 ₃ and 40 ₄ are configured in such a way that when a data read operation is performed by setting the program mode signal ^(˜)PGM to H-level, the node N40 of the data write circuits 40A₁, 40A₂, 40A₃ and 40A₄ is in a high impedance state.

For example, the data write circuit 40A₁ includes an inverter 41 to which the input data D₁ is supplied, a NOR gate 42 which outputs the negative logical sum of the output signal of the inverter 41 and the program mode signal ^(˜)PGM, and a NOR gate 43 which outputs the negative logical sum of the output signal of the NOR gate 42 and the program mode signal ^(˜)PGM. The data write circuit 40, also includes an NMOS transistor 44 which is connected between the node N40 and ground voltage GND, and is controlled by the output signal of the NOR gate 43, and an NMOS transistor 45 which is connected between the power supply voltage VCC and the node N40, and is controlled by the output signal of the NOR gate 42.

The write signals BLA₁ and BLA₂ outputted from the data write circuits 40A₁ and 40A₂ are supplied, for example, to the adjacent bit lines BL₀ and BL₁ via the transistors 60 a and 60 b selected by the column selection signals Y₀ and Y₁.

When the logical value ‘L’ is written as data into the memory cell 11 selected by the word line WL_(i), the even number selection signal SE_(j) or the odd number selection signal SO_(j), the memory array selection signal SS_(j) and the column selection signal Y_(k), the data D₂ inputted to the data write circuit 40A₂ is at L-level. At this time, the gate voltage Vg of the memory cell 11 is 10 V, the drain voltage Vd is VCC+2Vtn (=6 V), and the source voltage Vs is 0 V. Therefore, in the memory cell 11, a large current I_(d3) flows from the drain DR_(d) to the source SOU_(cd), and electrons are injected into the floating gate (e.g., in FIG. 5, the floating gate FG_(d)) by the avalanche hot carrier generated by this current.

On the other hand, when the logical value ‘H’ is written as data into the memory cell 11 selected by the word line WL_(i), the even number selection signal SE_(j) or the odd number selection signal SO_(j), the memory array selection signal SS_(j) and the column selection signal Y_(k), the data D₂ inputted to the data write circuit 40A₂ is at H-level. At this time, the gate voltage Vg of the memory cell 11 is 10 V, the drain voltage Vd is VCC+2Vtn (=6 V), and the source voltage Vs is VCC−Vtn (=3 V). Therefore, in the memory cell 11, only a relatively small current flows from the drain to the source (e.g., from the drain DR_(a) to the source SOU_(ab)), and electrons are not injected into the floating gate (e.g., in FIG. 5, the floating gate FG_(a)) by an avalanche hot carrier.

In the EPROM according to the first embodiment, the two adjacent bit lines BL_(k) and BL_(k+1) are selected simultaneously by the column selection signal Y_(k). The data (e.g., data BLA₁ and BLA₂) outputted from the data write circuits (e.g., the data write circuits 40A₁ and 40A₂) are written respectively into the two memory cells 11 connected to the selected bit lines BL_(k) and BL_(k+1). In FIG. 1, the memory cells 11 a and 11 d are selected by the word line WL₀, the even number selection signal SE₀, the memory array selection signal SS₀ and the column selection signal Y₀, and the data BLA₁ and BLA₂ are simultaneously written into the memory cells 11 a and 11 d, respectively. For example, when the memory cell 10 ₀ is selected by the memory array selection signal SS₀, the word line WL₀ is selected by the word line drive circuit 20 _(n), the bit lines BL₀ and BL₁ are selected by the column selection signal Y₀, and the drain lines DL₀ and DL₂ are selected by the even number selection signal SE₀, a current flows from the drain line DL₀ via the memory cell 11 a, source line SL₀, NMOS transistor 14 ₀, and bit line BL₀. As a result, a charge accumulates in the floating gate of the memory cell 11 a (when it has the logical value ‘L’), or does not accumulate in it (when it has the logical value ‘H’). Also, a current flows from the drain line DL₂ via the memory cell 11 d, source line SL₁, NMOS transistor 14 ₁, and bit line BL₁. As a result, a charge accumulates in the floating gate of the memory cell 11 d (when it has the logical value ‘L’), or does not accumulate in it (when it has the logical value ‘H’).

If the program mode signal ^(˜)PGM inputted to the data write circuits 40A₁ and 40A₂ is at H-level, the outputs of the NOR gates 42 and 43 are both at L-level, and the NMOS transistors 44 and 45 are both OFF. As a result, the outputs of the data write circuits 40A₁ and 40A₂ (i.e., the node N40) are in a high impedance state. At this time, a current path from the memory cells 11 a, 11 b, 11 c and 11 d to the ground voltage GND does not exist, so when the memory cells 11 a, 11 b, 11 c and 11 d are in the logical value ‘H’ state, the drain lines DL₀, DL₁ and DL₂, the source lines SL₀ and SL₁, and the bit lines BL₀ and BL₁ increase to the drain drive voltage MCD, i.e., VCC+2Vtn, via the memory cells 11 a, 11 b, 11 c and 11 d.

Here, when the logical value ‘H’ is written into the memory cell 11 a and the logical value ‘L’ is written into the memory cell 11 d, the program mode signal ^(˜)PGM inputted to the data write circuits 40 ₁ and 40 ₂ is at L-level, the write signal BLA₁ outputted from the data write circuit 40, is at H-level, and the write signal BLA₂ outputted from the data write circuit 40 ₂ is at L-level. The voltage of the bit line BL₀ is then a value of (VCC−Vtn), and the voltage of the bit line BL₁ is GND. At this time, as shown by the arrow I_(d3) in FIG. 5, current flows from the drain DR_(d) to the source SOU_(cd) at the voltage GND, electrons are injected into the floating gate FG_(d) by the avalanche hot carrier and the logical value ‘L’ is written into the memory cell 11 d. Also, only a small current flows from the drain DR_(a) to the source SOU_(ab) at a voltage (VCC−Vtn) electrons are not injected into the floating gate FG_(a) by the avalanche hot carrier, and therefore, the logical value ‘H’ is written into the memory cell 11 a.

Next, a data write operation of the EPROM according to the first embodiment will be described with reference to FIGS. 2 to 5.

First, at a time to in FIG. 2, the program mode signal ^(˜)PGM and the control signal CON are set to H-level. At the time t₀, the address signal ADR which specifies the address to be written is supplied to the address decoder (not shown). The address decoder which received the address signal ADR selects the memory array selection signal (i.e., one of the memory array selection signals SS₀, . . . , SS_(n)) for selecting the memory array (i.e., one of the memory arrays 10 ₀, . . . , 10 _(n)) containing the address to be written (i.e., selects H-level). The address decoder which received the address signal ADR supplies the decode signal (e.g., the decode signal DEC_(n)) for selecting one word line, e.g., the word line WL₀ in the selected memory array, e.g., memory array 10 ₀, (namely, for causing one word line to be at H-level) to the word line drive circuit, e.g., the word line drive circuit 20 _(n).

When the memory array selection signal SS₀ is selected, (i.e., set to H-level), the NMOS transistors 14 ₀, . . . , 14 _(z) of the selected memory array 10 ₀ are set to ON, and the source lines SL₀, . . . , SL_(z) of the selected memory array 10 ₀ are connected to the bit lines BL₀, BL_(z) via the NMOS transistors 14 ₀, . . . , 14 _(z), respectively. On the other hand, the memory arrays 10 ₁, . . . , 10 _(n) which are not selected are electrically isolated from the bit lines BL₀, . . . , BL_(z).

Also, the word line drive circuit 20 _(n) supplies the power supply voltage VCC (e.g., 4 V) to the selected word line WL₀ as a word line selection signal (word line drive voltage), and the power supply voltage VCC is thereby commonly applied to the control gates of the memory cells 11 connected to the word line WL₀. The voltage of the word lines WL₀, . . . , WL_(n−1) which are not selected, is ground voltage GND.

The write control circuit 30A also applies a drive voltage of, for example, 0.8 V to the drain of the selected memory cell 11 as the drain drive voltage (MCD).

At the time t₀, the program mode signal ^(˜)PGM is at H-level. The voltages BLA₁, BLA₂, BLA₃ and BLA₄ of the output node N40 from the data write circuits 40A₁, 40A₂, 40A₃ and 40A₄ are in the high impedance (H.I.) state, and the bit lines (e.g., the bit lines BL₀ and BL₁) and source lines (e.g., the bit lines SL₀ and SL₁) which are connected to the node N40 are also in the high impedance (H.I.) state.

At a time t₁, the program mode signal ^(˜)PGM is changed from H-level to L-level. At this time, the control signal CON is still H-level. If the program mode signal ^(˜)PGM is L-level, the output node of the data write circuits 40A₁ and 40A₂ will no longer be in a high impedance state, and will output the ground voltage GND or the drain drive voltage MCD (=0.8 V) corresponding to the input data D₁ and D₂ showing one of the logical values ‘H’ or ‘L’. However, at this time, since the data write circuits 40A₁ and 40A₂ are not connected to the data bus, the input data D₁ and D₂ are pulled up to H-level, and the write signals BLA₁ and BLA₂ become the same (0.8 V) as the drain drive voltage MCD (see FIG. 3). Therefore, not only in the memory cells 11 a and 11 d into which data are to be written but also in the adjacent memory cells 11 b and 11 c, the voltages of drain and source approximate the ground voltage GND.

At a time t₂, the input data D₁ (e.g., H-level) and D₂ (e.g., L-level) to be written are supplied to the data write circuits 40A₁ and 40A₂, respectively, via an input/output buffer (not shown). The write data signal BLA₁ of the data write circuit 40A₁ to which the input data D₁ at H-level was supplied, is still at the drain drive voltage MCD. The write data signal BLA₂ of the data write circuit 40A₂ to which the input data D₂ at L-level was supplied, is at the ground voltage GND (see FIG. 4).

At a time t₃, the control signal CON is set to L-level. At this time, the NMOS transistor 21 in the word line drive circuit 20 n is OFF, and the word line selection signal outputted to the word line WL₀ from of word line drive circuit 20 _(n) changes from the voltage VCC (=4 V) to the program voltage VPP (=10 V). Also, the drain drive voltage MCD outputted from the write control circuit 30A increases from 0.8 V to the voltage VCC+2Vtn (=6 V) due to the reference voltage generating part 31, and is supplied to the drains of the memory cells 11 a and 11 d in which the drain drive voltage MCD was selected and the data write circuits 40A₁ and 40A₂ (see FIG. 5). Therefore, the write voltages BLA₁ and BLA₂ respectively outputted to the bit lines BL₀ and BL₁ from the data write circuits 40A₁ and 40A₂ are respectively the drain drive voltage MCD (i.e., VCC+2Vtn) and ground voltage GND corresponding to the input data D₁ and D₂.

Due to this, in the memory cell 11 d selected by the address signal ADR in which it was specified to write the input data D₂ at L-level, the program voltage VPP (=10 V) is applied to the control gate, the drain drive voltage MCD (=6 V) is applied to the drain, and the ground voltage GND (=0 V) is applied to the source, respectively. In this memory cell 11 d, the voltage between the control gate and source is a high voltage (10 V), and the voltage between the source and drain is a high voltage (6 V), so some of the electrons (current I_(d3) of FIG. 5) flowing between the drain and the source are accelerated by the electric field and gain energy, exceed the energy barrier of the gate insulation film, and are injected into the floating gate.

On the other hand, in the memory cell 11 a selected by the address signal ADR in which it was specified to write the input data D₁ at H-level, the program voltage VPP (=10 V) is applied to the control gate, the drain drive voltage (MCD) (=6 V) is applied to the drain, and the voltage VCC−Vtn (=3 V) is applied to the source, respectively. In this case, the voltage between the control gate and source is 7 V, and the voltage between the drain and the source is 3 V, so the energy of the electrons flowing between the drain and the source is small, and these electrons are not injected into the floating gate.

Moreover, at the time t₂ (FIG. 4), the voltage of the drain line DL₁ is 0.8 V, and since the charge is very small, at the time t₃-t₄ (FIG. 5), a large current does not flow from the drain line DL₁, and there are no incorrect writes to memory cells (e.g., 11 b) which are not selected.

At a time t₄, after the time required for data write has elapsed, the program mode signal ^(˜)PGM changes from L-level to H-level, and the control signal CON changes from L-level to H-level. Also, the address signal ADR is changed over to another address. If the control signal CON is at H-level, the output voltage of the write control circuit 30A will be 0.8 V. Due to this, the charge accumulated on the write control line 13 starts to discharge, and the drain drive voltage MCD falls according to a fixed time constant. If the drain drive voltage MCD falls, therefore, the output voltages of the data write circuits 40A₁ and 40A₂ will also fall, and the voltage of the bit line BL will also fall.

As described above, in the EPROM according to the first embodiment, by controlling the selection signals WL₀, . . . , WL_(n) of the word lines outputted from the word line drive circuits 20 ₀, . . . , 20 _(n) and the change-over timing of the drain drive voltage MCD outputted from the write control circuit 30A by the program mode signal ^(˜)PGM and the control signal CON which are supplied from outside, the voltage between the source and drain of the adjacent memory cells 11 b and 11 c is made to approach the ground voltage GND before data is written into the memory cells 11 a and 11 d which were selected for data write. Hence, a high voltage is no longer applied between the drain and source of the memory cells 11 b and 11 c which were not selected for data write when data write is performed, and consequently, there is no incorrect write of data due to flow of discharge current, and the problem of increase of the threshold voltage Vt of the memory cell causing access delay or fluctuations in the operating power supply voltage, can be avoided.

Second Embodiment

FIG. 6 is a diagram schematically showing the construction of an EPROM which is a semiconductor memory device according to a second embodiment of the present invention. Those structures in FIG. 6 that are identical to or correspond to structures in FIG. 1 or FIG. 16 are assigned identical symbols. Further, FIG. 7 is a signal waveform diagram for describing a data write operation of the EPROM according to the second embodiment.

The EPROM according to the second embodiment differs from the EPROM of the first embodiment in that the delay circuit 50 is provided, the program mode signal ^(˜)PGM is delayed by the delay circuit 50, and this delayed signal is supplied to the word line drive circuits 20 ₀, . . . , 20 _(n) and write control circuit 30A as a control signal CON₁. The delay circuit 50 includes components such as a resistance, a capacitor and buffers, and the retardation amount is set to a time interval corresponding to the time t₁ to the time t₃ in FIG. 2. As shown in FIG. 6, the delay circuit 50, for example, includes inverters 51 a and 51 b, a resistance 52, a capacitor 53, and inverters 54 a and 54 b. The construction of the delay circuit 50 is not limited to that shown in this figure.

As shown in FIG. 7, the signal waveform when a data write is performed in the EPROM according to the second embodiment is substantially identical to according to the first embodiment if the control signal CON is replaced by the control signal CON₁. However, the control signal CON₁ is not at H-level at the time t₁₄, but becomes H-level after a predetermined delay time.

By adding a logic circuit such that the control signal CON₁ becomes L-level at a given time after the program mode signal ^(˜)PGM becomes L-level, and always outputting the H-level control signal CON₁ when the program mode signal (^(˜)PGM) is at H-level, a control signal having an identical timing to the control signal CON₁ of FIG. 7 can be generated.

As described above, the EPROM according to the second embodiment includes the delay circuit 50 which delays the program mode signal PGM to generate the control signal CON₁, so the same advantage as that of the EPROM of the first embodiment can be obtained without requiring the external control signal CON. Except for the above point, the second embodiment is identical to the case of the aforesaid first embodiment.

Third Embodiment

FIG. 8 schematically shows the construction of an EPROM which is a semiconductor memory device according to a third embodiment of the present invention. Those structures in FIG. 8 that are identical to or correspond to structures in FIG. 1, FIG. 6 or FIG. 16 are assigned identical symbols. Further, FIG. 9 is a circuit diagram showing the construction of a control signal generating circuit 70 of the EPROM according to the third embodiment.

The EPROM according to the third embodiment differs from the EPROM of the first embodiment in that the control signal generating circuit 70 is provided, the control signal CON is generated by this control signal generating circuit 70, and supplied to the word line drive circuits 20 ₀, . . . , 20 _(n) and write control circuit 30A. The control signal generating circuit 70 generates the control signal CON to be supplied to the word line drive circuits 20 ₀, . . . , 20 _(n) and write control circuit 30A using the signals in the data write circuits 40A₁ and 40A₂.

As shown in FIG. 9, the control signal generating circuit 70 includes a NOR gate 71 which negates the logical sum of a signal S43 outputted from a NOR gate 43 in the data write circuits 40A₁ and 40A₂, and inverters 72 and 73 connected to the output node of the NOR gate 71 (these form a delay circuit). The control signal CON is outputted from this delay circuit.

In the EPROM according to the third embodiment, until the valid input data D₁ and D₂ is supplied, i.e. during the time t₀–t₂ in FIG. 2, the signal S43 outputted from the data write circuits is at L-level. Therefore, a signal S71 outputted from the NOR gate 71 and the control signal CON are at H-level.

At the time t₂, when the valid data D₁ and D₂ are supplied, and at least one of the input data D₁ and D₂ is at L-level, the signal S71 outputted from the NOR gate 71 is at L-level. The signal S71 is delayed by the inverters 72 and 73, and at the time t₃, the control signal CON becomes L-level and is outputted. Except for the above point, the EPROM according to the third embodiment is identical to the case of the aforesaid second embodiment.

When the valid input data D₁ and D₂ are both at H-level, the control signal CON remains H-level and does not become L-level. Therefore, in this case, a write operation (i.e., a write of logical value data ‘L’ due to charge injection into the floating gate) does not occur in the memory cell. However, the fact that a charge is not injected into the memory cell means that logical value data ‘H’ is written.

As described above, in the EPROM according to the third embodiment, if at least one of the input data D_(1 and D) ₂ is at L-level, the control signal CON is outputted with a predetermined time delay after data input. Hence, if all the input data is at H-level, a data write operation is not performed. Therefore, in the EPROM according to the third embodiment, in addition to having an identical advantage to that of the second embodiment, an unnecessary write voltage is not applied, and the stress on the memory cell is mitigated.

Fourth Embodiment

FIG. 10 is a diagram schematically showing the construction of an EPROM which is a semiconductor memory according to a fourth embodiment of the present invention. Those structures in FIG. 10 that are identical to or correspond to structures in FIG. 1, FIG. 6, FIG. 8 or FIG. 16 are assigned identical symbols. Further, FIG. 11 is a circuit diagram showing the construction of a data write circuit 40C of the EPROM according to the fourth embodiment.

In the EPROM according to the fourth embodiment, the construction of the data write circuit 40C differs from the EPROM of the first embodiment. In the data write circuit 40C of the fourth embodiment, an NMOS transistor 47 of which the transconductance g_(m) is much smaller than that of the NMOS transistor 45, is connected between the node N40 of the data write circuit 40A₁ shown in FIG. 1 and the ground voltage GND, and the output signal of the NOR gate 42 is supplied to the gate of the NMOS transistor 47.

In the EPROM which uses this data write circuit 40C, instead of the control signal CON supplied to the word line drive circuits 20 ₀, . . . , 20 _(n), and write control circuit 30A, the program mode signal ^(˜)PGM is used.

FIG. 12 is a signal waveform diagram for describing a data write operation of the EPROM according to the fourth embodiment. Further, FIG. 13 to FIG. 15 are diagrams (No. 1–No. 3) for describing a data write operation of the EPROM according to the fourth embodiment.

When a data write operation is not performed, the program mode signal PGM is set to H-level.

When data write starts, at a time t₂₀ in FIG. 12, the address signal ADR which specifies an address to be written is supplied to the address decoder, and from this address decoder, for example, the memory array selection signal SS₀ and even number selection signal SE₀ are supplied to the memory array 10 ₀, and the decode signal DEC₀ which selects the word line WL₀ is supplied to the word line drive circuit 20 ₀. As a result, the selected memory array 10 ₀ is connected to the bit lines BL₀, . . . , BL_(y), BL_(z), and the memory arrays 10 ₁, . . . , 10 _(n) which were not selected are electrically isolated from these bit lines BL₀, . . . , BL_(y), BL_(z). The selection signal of the power supply voltage VCC is also applied from the word line drive circuit 20 ₀ to the control gate of the memory cell connected to the selected word line WL₀. Further, the drain drive voltage MCD is applied to the drain of the selected memory cell 11, and the source is connected to the data write circuit 40C via the source lines SL₀, . . . , SL_(x), SL_(z) and bit lines BL₀, . . . , BL_(y), BL_(z) (see FIG. 13).

At a time t₂₁, the program mode signal ^(˜)PGM is at L-level, and a data write operation starts. The output node of the data write circuit 40C is no longer in a high impedance state, and becomes ground voltage GND or the drain drive voltage MCD (at this time, 0.8 V) with respect to the input data D₁ and D₂. However, at this time the data write circuit 40C is not connected to the data bus, so the input data D₁ and D₂ are at H-level.

On the other hand, the word line selection signal outputted from the word line drive circuit 20 ₀ to the word line WL₀ increases to the program voltage VPP (=10 V) Also, the drain drive voltage MCD outputted from the write control circuit 30A increases from 0.8 V to the voltage VCC+2Vtn (=6 V), and this drain drive voltage MCD is supplied to the drains DR_(a) and DR_(d) of the selected memory cells 11 a and 11 d and the data write circuit 40C.

At this time, in the data write circuit 40C, the NMOS transistor 47 is ON, so the voltage of the node N40 is set to the voltage VCC−Vtn (=3 V) by the transconductance g_(m) ratio between this NMOS transistor 47 and the NMOS transistor 45. Therefore, the write voltages BLA₁ and BLA₂ outputted from the data write circuit 40C to the bit lines BL₀ and BL₁ increase only to the voltage VCC−Vtn (see FIG. 14).

At a time t₂₂, the input data D₁ (e.g., L-level) and D₂ (e.g., H-level) which are to be written are respectively supplied to the data write circuit 40C from the data bus via an input/output buffer (not shown). Due to this, the write data signal BLA₁ of the data write circuit 40C to which the L-level input data D₁ was supplied effectively becomes the ground voltage GND. On the other hand, the write data signal BLA₂ of the data write circuit 40C to which the H-level input data D₂ was supplied, remains the voltage VCC−Vtn. In this state, a charge is injected into the floating gate FG_(d) by a current I_(d4) and the logical value ‘L’ is written into the memory cell 11 d, whereas the logical value ‘H’ is written into the memory cell 11 a without injecting a charge into the floating gate FG_(a) (see FIG. 15).

At a time t₂₃, after a time required for data write has elapsed, the program mode signal ^(˜)PGM becomes H-level, the address signal ADR changes over to another address, and the data write operation is terminated.

As described above, in the EPROM according to the fourth embodiment, the NMOS transistor 47 is added between the node N40 and ground voltage GND, and the write data signal BLA₁ does not increase above the voltage VCC−Vtn. Therefore, before writing data to the memory cells 11 a and 11 d to which data is to be written, the voltage of the drain and source of the adjacent memory cells 11 b and 11 c can be made equal to or less than the power supply voltage VCC. In this way, a high voltage is not applied between the drain and the source of the memory cells 11 b and 11 c to which data is not to be written during a data write, and an identical effect to that of the second embodiment is obtained.

The invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of following claims. 

1. A semiconductor memory device comprising: plural word lines; plural drain lines; plural source lines; a memory array including plural memory cells formed from a field effect transistor having a gate, a drain, a source and a floating gate, said gate of each of said plural memory cells being connected to any of said plural word lines, said drain of each of said plural memory cells being connected to any of said plural drain lines, said source of each of said plural memory cells being connected to any of said plural source lines; a data write circuit which receives a first control signal and write data and supplies a source drive voltage to said source line when data is written into said memory cell; a write control circuit which receives a second control signal supplied later than said first control signal and supplies a drain drive voltage based on said second control signal to said drain line when data is written into said memory cell; and a word line drive circuit which receives an address signal and said second control signal, and supplies a word line drive voltage based on said second control signal to said word line selected according to said address signal; wherein said write control circuit outputs said drain drive voltage at a high level for data write via said drain line to said memory cell selected by said word line drive circuit when a data write operation is commanded by said second control signal, and outputs said drain drive voltage at a low level when a data write operation is not commanded by said control signal, and said data write circuit generates a write voltage corresponding to a logical value of data to be written into said selected memory cell based on said drain drive voltage outputted from said write control circuit, and supplies said write voltage as said source drive voltage via said source line to said selected memory cell when a data write operation is commanded by said first control signal.
 2. The semiconductor memory device according to claim 1, further comprising a delay circuit which delays said first control signal to generate said second control signal.
 3. The semiconductor memory device according to claim 1, further comprising a control circuit generating circuit which generates and outputs said second control signal when a data write operation is commanded by said first control signal and said data write operation is performed to accumulate charge in said floating gate by said data to be written into said selected memory cell.
 4. A semiconductor memory device comprising: plural word lines; plural drain lines; plural source lines; a memory array including plural memory cells formed from a field effect transistor having a gate, a drain, a source and a floating gate, said gate of each of said plural memory cells being connected to any of said plural word lines, said drain of each of said plural memory cells being connected to any of said plural drain lines, said source of each of said plural memory cells being connected to any of said plural source lines; a data write circuit which receives a control signal and write data and supplies a source drive voltage to said source line when data is written into said memory cell; a write control circuit which receives said control signal and supplies a drain drive voltage based on said control signal to said drain line when data is written into said memory cell; and a word line drive circuit which receives an address signal and said control signal and supplies a word line drive voltage based on said second control signal to a word line selected according to said address signal; wherein said write control circuit outputs said drain drive voltage at a high level for data write via said drain line to said memory cell selected by said word line drive circuit when a data write operation is commanded by said control signal, and outputs said drain drive voltage at a low level when a data write operation is not commanded by said control signal, and said data write circuit generates a write voltage corresponding to a logical value of data to be written into said selected memory cell based on said drain drive voltage outputted from said write control circuit, and supplies said write voltage as said source drive voltage via said source line to said selected memory cell when a data write operation is commanded by said first control signal.
 5. The semiconductor memory device according to claim 4, wherein said data write circuit includes: a first transistor connected between a first output node of said write control circuit and a second output node which outputs said write voltage; a second transistor connected between ground voltage and said second output node, conduction state of said second transistor being controlled by a signal according to a logical value which is an inverse of said logical value of said data to be written; and a third transistor connected between ground potential and said second output node, conduction state of said third transistor being controlled by a signal according to said logical value of said data to be written.
 6. A semiconductor memory device comprising: plural word lines; plural drain lines; plural source lines; a memory array including plural memory cells formed from a field effect transistor having a gate, a drain, a source and a floating gate, said gate of each of said plural memory cells being connected to any of said plural word lines, said drain of each of said plural memory cells being connected to any of said plural drain lines, said source of each of said plural memory cells being connected to any of said plural source lines; a data write circuit which receives a first control signal set to any of first and second control voltages and write data corresponding to any of first and second logical values, and supplies a source drive voltage based on said write data to said source line when data is written into said memory cell; a write control circuit which receives a second control signal set to any of third and fourth control voltages, and supplies a drain drive voltage based on said second control signal to said drain line when data is written into said memory cell; and a word line drive circuit which receives an address signal and said second control signal, and supplies a word line drive voltage based on said second control signal to said word line selected according to said address signal when data is written into said memory cell; wherein, when data is written into said memory cell, said first control signal is changed over from said first control voltage to said second control voltage, and said second control signal is changed over from said third control voltage to said fourth control voltage at a time which is later than a time at which said first control signal is changed over to said second control voltage, said write control circuit sets said drain drive voltage to a first drive voltage when said second control signal is said third control voltage, and sets said drain drive voltage to a second drive voltage higher than said first drive voltage when said second control signal is said fourth control voltage, said word line drive circuit sets said selected word line to a third drive voltage when said second control signal is said first control voltage, and sets said selected word line to a fourth drive voltage higher than said third drive voltage when said second control signal is said fourth control voltage, and said data write circuit sets said source drive voltage to a voltage lower than said drain drive voltage from when said first control signal is changed over to said second control voltage to when said second control signal is changed over to said fourth control voltage, and sets said source drive voltage to any of a fifth drive voltage higher than said drain drive voltage and a sixth drive voltage lower than said drain drive voltage according to a logical value of said write data while said second control signal is said fourth control voltage.
 7. A semiconductor memory device, comprising: plural word lines; plural drain lines; plural source lines; a memory array including plural memory cells formed from a field effect transistor having a gate, a drain, a source and a floating gate, said gate of each of said plural memory cells being connected to any of said plural word lines, said drain of each of said plural memory cells being connected to any of said plural drain lines, said source of each of said plural memory cells being connected to any of said plural source lines; a data write circuit which receives a first control signal and write data corresponding to any of first and second logical values, and supplies a source drive voltage based on said write data to said source line when data is written into said memory cell; a delay circuit which delays said first control signal set to any of first and second control voltages to generate a second control signal; a write control circuit which receives a second control signal set to any of third and fourth control voltages, and supplies a drain drive voltage based on said second control signal to said drain line when data is written into said memory cell; and a word line drive circuit which receives an address signal and said second control signal, and supplies a word line drive voltage based on said second control signal to said word line selected according to said address signal when data is written into said memory cell; wherein, when data is written into said memory cell, said write control circuit sets said drain drive voltage to a first drive voltage when said second control signal is said third control voltage, and sets said drain drive voltage to a second drive voltage higher than said first drive voltage when said second control signal is said fourth control voltage, said word line drive circuit sets said selected word line to a third drive voltage when said second control signal is said third control voltage, and sets said selected word line to a fourth drive voltage higher than said third drive voltage when said second control signal is said fourth control voltage, and said data write circuit sets said source drive voltage to a voltage lower than said drain drive voltage from when said first control signal is changed over to said second control voltage to when said second control signal is changed over to said fourth control voltage, and sets said source drive voltage to any of a fifth drive voltage higher than said drain drive voltage and a sixth drive voltage lower than said drain drive voltage according to a logical value of said write data while said second control signal is said fourth control voltage.
 8. A semiconductor memory device, comprising: plural word lines; plural drain lines; plural source lines; a memory array including plural memory cells formed from a field effect transistor having a gate, a drain, a source and a floating gate, said gate of each of said plural memory cells being connected to any of said plural word lines, said drain of each of said plural memory cells being connected to any of said plural drain lines, said source of each of said plural memory cells being connected to any of said plural source lines; a data write circuit which receives a first control signal set to any of first and second control voltages and write data corresponding to any of first and second logical values, and supplies a source drive voltage based on said write data to said source line when data is written into said memory cell; a write control circuit which receives a second control signal set to any of third and fourth control voltages, and supplies a drain drive voltage based on said second control signal to said drain line when data is written into said memory cell; a word line drive circuit which receives an address signal and said second control signal, and supplies a word line drive voltage based on said second control signal to said word line selected according to said address signal when data is written into said memory cell; and a control signal generating circuit which changes over said second control signal to said fourth control voltage, when data is written into said memory cell, said first control signal is said second control voltage, and a charge is accumulated in said floating gate by data to be written into said selected memory cell; wherein said write control circuit sets said drain drive voltage to a first drive voltage when said second control signal is said third control voltage, and sets said drain drive voltage to a second drive voltage higher than said first drive voltage when said second control signal is said fourth control voltage, said word line drive circuit sets said selected word line to a third drive voltage when said second control signal is said third control voltage, and sets said selected word line to a fourth drive voltage higher than said third drive voltage when said second control signal is said fourth control voltage, and said data write circuit sets said source drive voltage to a voltage lower than said drain drive voltage from when said first control signal is changed over to said second control voltage to when said second control signal is changed over to said fourth control voltage, and sets said source drive voltage to any of a fifth drive voltage higher than said drain drive voltage and a sixth drive voltage lower than said drain drive voltage according to a logical value of said write data while said second control signal is said fourth control voltage.
 9. A semiconductor memory device comprising: plural word lines; plural drain lines; plural source lines; a memory array including plural memory cells formed from a field effect transistor having a gate, a drain, a source and a floating gate, said gate of each of said plural memory cells being connected to any of said plural word lines, said drain of each of said plural memory cells being connected to any of said plural drain lines, said source of each of said plural memory cells being connected to any of said plural source lines; a data write circuit which receives a control signal set to any of first and second control voltages and write data corresponding to any of first and second logical values, and supplies a source drive voltage based on said write data to said source line when data is written into said memory cell; a write control circuit which receives said control signal, and supplies a drain drive voltage based on said control signal to said drain line when data is written into said memory cell; and a word line drive circuit which receives an address signal and said control signal, and supplies a word line drive voltage based on said control signal to said word line selected according to said address signal when data is written into said memory cell; wherein, when data is written into said memory cell, said control signal changes over from said first control voltage to said second control voltage; said write control circuit sets said drain drive voltage to a first drive voltage when said control signal is said first control voltage, and sets said drain drive voltage to a second drive voltage higher than said first drive voltage when said control signal is said second control voltage, said word line drive circuit sets said selected word line to a third drive voltage when said control signal is said first control voltage, and sets said selected word line to a fourth drive voltage higher than said third drive voltage when said control signal is said second control voltage, and said data write circuit generates a write voltage corresponding to said logical value of said data to be written into said selected memory cell using said drain drive voltage outputted from said write control circuit when said source drive voltage is changed over to said second control voltage of said control signal, and supplies said write voltage as said source drive voltage to said selected memory cell via said source line. 